Exciton spectra and energy band structure of Cu2ZnSiSe4

• Published in: Journal of alloys and compounds Vol. 587; pp. 393 - 397
• Main Authors: Guc, M., Levcenko, S., Dermenji, L., Gurieva, G., Schorr, S., Syrbu, N.N., Arushanov, E.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 25.02.2014; Elsevier
• Subjects: Band structure of solids; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cu2ZnSiSe4; Dispersions; Electron density of states and band structure of crystalline solids; Electron states; Electronic band structure; Energy bands; Exact sciences and technology; Excitation spectra; Exciton spectra; Excitons and related phenomena; Mathematical models; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics; Polarized reflectivity; Reflectivity; Semiconductor compounds; Semiconductors; Single crystal; Spectra; Exciton spectra; Cu2ZnSiSe4; Polarized reflectivity; Electronic band structure; Single crystal; Band structure; Semiconductor materials; Selenides; Reflectivity; Free carrier; Monocrystals; Electronic structure; Cu; Excitons; Reflection spectrum; ZnSiSe; Effective mass; Permittivity
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2013.10.172

•Reflection spectra of Cu2ZnSiSe4 were studied for E ⊥ c and E || c light polarizations.•Four excitonic series are revealed in the reflection spectra at 10K.•Model of exciton dispersion and the presence of a dead-layer.•Exciton Rydberg energies and free carriers effective masses were calculated.•Reflectivity for E ⊥ c and E || c were analyzed in the region 3–6eV at 300K. Exciton spectra are studied in Cu2ZnSiSe4 single crystals at 10 and 300K by means of reflection spectroscopy. The exciton parameters, dielectric constant and free carriers effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The structure found in the reflectivity was analyzed and related to the theoretical electronic band structure of close related Cu2ZnSiS4 semiconductor.