Impact of piezo-phototronic effect on ZnMgO/Se heterojunction photovoltaic devices

• Published in: Nano energy Vol. 99; p. 107385
• Main Authors: Fujimura, Jun, Adachi, Yusuke, Takahashi, Teruki, Kobayashi, Taizo
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2022
• Subjects: Conduction band offset; Flexible photovoltaic device; Piezo-phototronic effect; ZnMgO/Se heterojunction; Piezo-phototronic effect; Conduction band offset; ZnMgO/Se heterojunction; Flexible photovoltaic device
• ISSN: 2211-2855
• DOI: 10.1016/j.nanoen.2022.107385

This paper investigates the impact of piezo-phototronic effects on the power conversion efficiency of ZnMgO/Se heterojunction photovoltaic devices. Sputter-deposited ZnMgO thin film and photo-absorbing Se were employed as the n-type window layer and p-type layer, respectively, to form a photovoltaic device on a flexible polyethylene terephthalate film. The applied strain was varied, and the changes due to the applied strain were recorded. The open-circuit voltage (Voc) increased from 0.59 V to 0.75 V when the applied strain was increased from − 0.41–0.40% by varying the bending angle. It has been reported that piezoelectric polarization of ZnMgO can decrease conduction band offset (CBO) between the ZnMgO and Se layers. [Display omitted] •Piezo-phototronic effect to sputter-deposoited ZnMgO/Se heterojunction photovoltaic devices for the first time.•Demonstration of the increased Voc of ZnMgO/Se photovoltaic devices on PET films under a static strain.•Voc increased from 0.59 V to 0.75 V with increasing strain from − 0.40–0.40%.