Surface morphology of Si layers grown on SiO2

• Published in: Applied surface science Vol. 267; pp. 40 - 44
• Main Authors: Shklyaev, A.A., Kozhukhov, A.S., Armbrister, V.A., Gulyaev, D.V.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.02.2013
• Subjects: Atomic force microscopy; Dislocations; Photoluminescence in the 1.5-μm region; Scanning tunneling microscopy; Silicon growth; Surface morphology; Scanning tunneling microscopy; Atomic force microscopy; Photoluminescence in the 1.5-μm region; Surface morphology; Silicon growth; Dislocations
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2012.05.069

► Si crystals appear to be larger and uniform when Si is grown on SiO2 covered with an array of Ge islands. ► Si crystals grown on SiO2 have a rounded shape at the surface, indicating the presence of high concentration of threading dislocations. ► Si crystals grown on SiO2 at temperatures in the 430–550°C range produce photoluminescence in the 1.5μm region. Layers of Si crystals grown on SiO2 surfaces are investigated by scanning tunneling and atomic force microscopy. The deposition of an array of Ge islands on SiO2 surfaces prior to Si growth is found to significantly decrease the concentration of Si crystals and make them more uniform in size. The Si crystals grown at temperatures from 430 to 550°C have a rounded shape of the growing surface. This indicates the presence of a high concentration of threading dislocations and that is confirmed by the observation of dislocation-related photoluminescence in the 1.5μm region. Layers of Si crystals grown on SiO2 are of interest for the fabrication of optical resonant structures for the near-infrared region.