On the angular dependence of proton induced events and charge collection [SRAMs]

Careful measurements of the angular dependence of proton induced SEU and SEL in HM65162 SRAMs and of energy deposited by protons in thin surface barrier detectors are reported. We found a very weak anisotropy whose behavior is described by our model.< >

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Bibliographic Details
Published inIEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41; no. 6; pp. 2098 - 2102
Main Authors Levinson, J., Barak, J., Zentner, A., Akkerman, A., Lifshitz, Y., Victoria, M., Hajdas, W., Alurralde, M.
Format Journal Article Conference Proceeding
LanguageEnglish
Published New York, NY IEEE 01.12.1994
Institute of Electrical and Electronics Engineers
Subjects
ANGULAR DISTRIBUTION
Anisotropic magnetoresistance
ANISOTROPY
Applied sciences
Belts
DATA
Detectors
DISTRIBUTION
Electronics
ENERGY DEPOSITION
Energy measurement
ERRORS
Exact sciences and technology
EXPERIMENTAL DATA
Extraterrestrial measurements
Face detection
INFORMATION
INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MEMORY DEVICES
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
Protons
RADIATION EFFECTS 440200 > Radiation Effects on Instrument Components, Instruments, or Electronic Systems
Random access memory
Satellites
Single event upset
SPACE FLIGHT
Testing, measurement, noise and reliability
On board equipment
Radiation resistance
Random access memory(RAM)
Artificial satellite
Integrated circuit
Proton irradiation
Angular distribution
Experimental study
Reliability
Static storage
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Summary:Careful measurements of the angular dependence of proton induced SEU and SEL in HM65162 SRAMs and of energy deposited by protons in thin surface barrier detectors are reported. We found a very weak anisotropy whose behavior is described by our model.< >
Bibliography:None
CONF-940726--
ISSN:0018-9499
1558-1578
DOI:10.1109/23.340548