Highly Transparent p-Type ZnO Thin Films Prepared by Non-Toxic Sol-Gel Process

• Published in: Electrochemical and solid-state letters Vol. 15; no. 6; pp. H195 - H197
• Main Authors: Chuang, Chia-Lin, Wang, Wen-Jie, Wang, Chung-Yen, Tseng, Wei-Hsuan, Wu, Chih-I
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society 01.01.2012
• ISSN: 1099-0062; 1944-8775
• DOI: 10.1149/2.025206esl

In-N co-doped p-type ZnO thin films were demonstrated using a non-toxic sol-gel spin coating process. The resistivity of the p-type ZnO films is 4.43 Ω cm with the carrier concentration of 1.36 × 1018 cm−3 at room temperature. The X-ray photoelectron spectra of N 1s core level measured with an Al Kα photon line identify the existence of nitrogen in the p-type ZnO. The secondary ion mass spectrometry depth profile also confirms the nitrogen contents in the In-N co-doped films. In addition, the In-N co-doped film with a thickness of 200 nm has a high transparency about 90% in the visible region.