Electrical and photoelectrical properties of CuInS2–ZnIn2S4 solid solutions

• Published in: Journal of alloys and compounds Vol. 553; pp. 48 - 52
• Main Authors: Bozhko, V.V., Novosad, A.V., Davidyuk, G.E., Kozer, V.R., Parasyuk, O.V., Vainorius, N., Janonis, V., Sakavičius, A., Kažukauskas, V.
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier B.V 15.03.2013; Elsevier
• Subjects: Alloys; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Crystals; Defects in semiconductors; Electrical resistivity; Electrical transport; Electronic transport in condensed matter; Exact sciences and technology; Inorganic materials; Mobility edges ; hopping transport; Photoconduction and photovoltaic effects; photodielectric effects; Photoconductivity; Photoelectrical spectroscopy; Physics; Resistivity; Semiconductors; Solid solutions; Spectra; Thermally stimulated current; Photoelectrical spectroscopy; Semiconductors; Electrical transport; Inorganic materials; Defects in semiconductors; Liquid phase deposition; Electrical conductivity; Semiconductor materials; N type conductivity; Hopping conduction; Defects; Zinc sulfide; Charge carrier trapping; Solid solutions; Temperature effects; Copper sulfide; Photoconductivity; Indium sulfide
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2012.10.134

Spectral dependencies of the relative photoconductivity of CuInS2–ZnIn2S4 crystals with 4mol% (left) and 8mol% (right) of ZnIn2S4. Arrows indicate scanning directions of the spectra. [Display omitted] ► CuInS2–ZnIn2S4 solid alloys containing 4, 8, and 12mol% ZnIn2S4 were analysed. ► (Photo-) electrical properties were investigated in the temperature region from 27K to 300K. ► In the single crystals with 8–12mol% of ZnIn2S4 the induced photoconductivity was observed. ► The two trapping centre model was used to explain the results. We have investigated CuInS2–ZnIn2S4 solid alloys containing 4, 8, and 12mol% ZnIn2S4. The samples with 16mol% ZnIn2S4 were two component ones. The materials were prepared by the liquid phase deposition method, and had demonstrated n-type conductivity. Temperature dependencies of their electrical conductivity and thermally stimulated currents were investigated in the temperature region from 27K to 300K. Their photoconductivity spectral distributions of were analysed at T≈30K. In the crystals with 8–12mol% of ZnIn2S4 the induced photoconductivity phenomenon was observed. It was explained on the basis of the two trapping centre model. In the low temperature region conductivity behaviour could be explained on the basis of the Variable Range Hopping model.