Study of structural, electrical and optical properties of MoRe0.001Se1.999 single crystal

In the present work, structural, electrical and optical properties of MoRe0.001Se1.999 single crystal grown using the direct vapour transport (DVT) method have been reported. The crystal has been structurally characterized by XRD, determining its lattice parameters a and c and by measuring the X-ray...

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Bibliographic Details
Published inSemiconductor physics, quantum electronics, and optoelectronics Vol. 23; no. 3; pp. 267 - 270
Main Author Vora, A.M.
Format Journal Article
LanguageEnglish
Published National Academy of Sciences of Ukraine. Institute of Semi conductor physics 01.01.2020
Subjects
direct vapour transport (dvt) technique
electrical and optical properties
single crystal
structural
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Summary:In the present work, structural, electrical and optical properties of MoRe0.001Se1.999 single crystal grown using the direct vapour transport (DVT) method have been reported. The crystal has been structurally characterized by XRD, determining its lattice parameters a and c and by measuring the X-ray density. The obtained data of the Hall effect and thermoelectric power measurements support that this crystal is of p-type in nature. The direct and indirect band gap measurements were also carried out for this semiconducting material. It has been ascertained that the rhenium doping has a considerable effect on the properties of MoSe2 single crystal.
ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo23.03.267