Data Retention Characteristics of Nitride-Based Charge Trap Memory Devices with High-k Dielectrics and High-Work-Function Metal Gates for Multi-Gigabit Flash Memory

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 45; no. 4S; p. 3213
Main Authors Lee, Jang-Sik, Kang, Chang-Seok, Shin, Yoo-Cheol, Lee, Chang-Hyun, Park, Ki-Tae, Sel, Jong-Sun, Kim, Viena, Choe, Byeong-In, Sim, Jae-Sung, Choi, Jungdal, Kim, Kinam
Format Journal Article
LanguageEnglish
Published 01.04.2006
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.3213