Quantum Mechanical Study on Tunnelling and Ballistic Transport of Nanometer Si MOSFETs

• Published in: Chinese physics letters Vol. 27; no. 5; pp. 196 - 199
• Main Author: 邓惠雄 姜向伟 唐黎明
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.05.2010
• Subjects: Band structure of solids; Channels; Mathematical analysis; MOSFET; MOSFETs; Poisson方程; Quantum mechanics; Simulation; Transport; Tunnelling; 弹道导弹; 纳米硅; 自洽计算; 运输机械; 量子隧道; 金属氧化物半导体场效应晶体管
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/27/5/057101

Using self-consistent calculations of million-atom SchrSdinger-Poisson equations, we investigate the I-V characteristics of tunnelling and ballistic transport of nanometer metal oxide semiconductor field effect transistors （MOSFET） based on a full 3-D quantum mechanical simulation under nonequilibtium condition. Atomistic empirical pseudopotentials are used to describe the device Hamiltonian and the underlying bulk band structure. We find that the ballistic transport dominates the I-V characteristics, whereas the effects of tunnelling cannot be neglected with the maximal value up to 0.8mA/μm when the channel length of MOSFET scales down to 25 nm. The effects of tunnelling transport lower the threshold voltage Vt. The ballistic current based on fully 3-D quantum mechanical simulation is relatively large and has small on-off ratio compared with results derived from the calculation methods of Luo et al.