Effect of LPHT annealing on interface characteristics between HPHT Ib diamond substrates and homoepitaxial CVD diamond layers

To study the interface characteristics between substrates and homoepitaxially grown single crystalline diamond layers, the high-pressure/high-temperature Ib diamond seeds with homoepitaxial diamond layers were annealed by low-pressure/high-temperature treatment in a hydrogen environment. The stress...

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Bibliographic Details
Published inJournal of materials research Vol. 35; no. 5; pp. 527 - 536
Main Authors Zhu, Xiaohua, Liu, Jinlong, Shao, Siwu, Zhao, Yun, Tu, Juping, Chen, Liangxian, Wei, Junjun, Li, Chengming
Format Journal Article
LanguageEnglish
Published Cham Springer International Publishing 16.03.2020
Springer Nature B.V
Subjects
Annealing
Applied and Technical Physics
Biomaterials
Chemical vapor deposition
Compressive properties
Defects
Diamonds
High temperature
Inorganic Chemistry
Interfaces
Low pressure
Materials Engineering
Materials research
Materials Science
Nanotechnology
Photoluminescence
Plasma etching
Raman spectroscopy
Seeds
Stress state
Substrates
Temperature
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Summary:To study the interface characteristics between substrates and homoepitaxially grown single crystalline diamond layers, the high-pressure/high-temperature Ib diamond seeds with homoepitaxial diamond layers were annealed by low-pressure/high-temperature treatment in a hydrogen environment. The stress evolution and related impurity transformation near the interface were characterized by Raman spectroscopy, photoluminescence, and micro-infrared spectroscopy before and after annealing. It is found that the stress is the smallest in a 100 µm wide zone near the interface, accompanying with the similar change in substitutional nitrogen (Ns) concentration. After annealing at 1050 °C, 1250 °C, and 1450 °C, the local compressive stress is released gradually with temperature change. It is decreased by 1.03 GPa in maximum after annealing at 1450 °C. The concentration of nitrogen–vacancy (NV) complexes in the chemical vapor deposition (CVD) layer is dramatically reduced at 1450 °C. The value of I NV − / I diamond decreases much more than I NV 0 / I diamond in the CVD layer, which is due to the lower stability of NV − compared with NV 0 at high temperature.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2019.407