Silicon-Based Solar Cell Fabricated by Metal-Induced Lateral Crystallization of Amorphous Silicon Film

Silicon-based polycrystalline solar cells are first fabricated by metal-induced lateral crystallization in which n-type polycrystalline-silicon (poly-Si) films, processed using nickel-induced amorphous silicon, are grown on p-silicon substrate at 550 °C by furnace annealing. The fabricated n-type po...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 45; no. 10R; p. 7675
Main Authors Hwang, Jun-Dar, Chi, Tzu-Yi, Liu, Jun-Chin, Kung, Chung-Yuan, Hsein, In-Cha
Format Journal Article
LanguageEnglish
Published 01.10.2006
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Summary:Silicon-based polycrystalline solar cells are first fabricated by metal-induced lateral crystallization in which n-type polycrystalline-silicon (poly-Si) films, processed using nickel-induced amorphous silicon, are grown on p-silicon substrate at 550 °C by furnace annealing. The fabricated n-type poly-Si/p-substrate solar cell exhibits a conversion efficiency of 10.4% and an open-circuit voltage of 0.54 V without any passivation or antireflection coating layers.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.7675