Si Nano-Photodiode with a Surface Plasmon Antenna

Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 44; no. 3L; p. L364
Main Authors Ishi, Tsutomu, Fujikata, Junichi, Makita, Kikuo, Baba, Toshio, Ohashi, Keishi
Format Journal Article
LanguageEnglish
Published 01.01.2005
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Summary:Nano-photodiodes with a subwavelength active area using the optical near-field enhanced by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that consists of an active area of 300 nm in diameter and a surface plasmon antenna to generate the carrier within the active area efficiently. The fabricated photodiode shows an increase of the photocurrent by several tenfold compared to that without a surface plasmon antenna. This result suggests an enhanced photogeneration of carriers in a semiconductor via surface plasmon resonance. Such a Si nano-photodiode is a potential high-speed optical signal detector because the opto-electronic conversion process occurs within a subwavelength scale.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L364