Optical and dielectric properties of CuAl2O4 films synthesized by solid-phase epitaxy
The synthesis and properties of CuAl{sub 2}O{sub 4} thin films have been examined. The CuAl{sub 2}O{sub 4} films were deposited via reactive direct current magnetron sputter using a CuAl{sub 2} target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded...
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Published in | Thin solid films Vol. 515; no. 17; pp. 6938 - 6942 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Lausanne
Elsevier Science
01.06.2007
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Subjects | |
Online Access | Get full text |
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Summary: | The synthesis and properties of CuAl{sub 2}O{sub 4} thin films have been examined. The CuAl{sub 2}O{sub 4} films were deposited via reactive direct current magnetron sputter using a CuAl{sub 2} target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded solid-phase epitaxy on MgO. The film orientation was cube-on-cube epitaxy on (001) MgO single-crystal substrates. The films were transparent to visible light. The band gap of crystalline CuAl{sub 2}O{sub 4} was determined to be {approx} 4 eV using a Tauc plot from the optical transmission spectrum. The dielectric constant of the amorphous films was determined to be {approx} 20-23 at 1-100 kHz. |
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Bibliography: | DE-AC05-00OR22725 USDOE Office of Science (SC) |
ISSN: | 0040-6090 1879-2731 |
DOI: | 10.1016/j.tsf.2007.02.012 |