Sharply increasing effective mass near the 2D metal–insulator transition
We report measurements of the effective mass and Landé g factor in strongly interacting two-dimensional systems in silicon. A sharp increase of the effective mass has been observed near the metal–insulator transition, while the g factor remained nearly constant and close to its value in bulk silicon...
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| Published in | Physica. E, Low-dimensional systems & nanostructures Vol. 22; no. 1; pp. 224 - 227 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.04.2004
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| Subjects | |
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| Abstract | We report measurements of the effective mass and Landé
g factor in strongly interacting two-dimensional systems in silicon. A sharp increase of the effective mass has been observed near the metal–insulator transition, while the
g factor remained nearly constant and close to its value in bulk silicon. Furthermore, the enhanced effective mass has been found to be independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement, in contradiction with existing theories. |
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| AbstractList | We report measurements of the effective mass and Landé
g factor in strongly interacting two-dimensional systems in silicon. A sharp increase of the effective mass has been observed near the metal–insulator transition, while the
g factor remained nearly constant and close to its value in bulk silicon. Furthermore, the enhanced effective mass has been found to be independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement, in contradiction with existing theories. |
| Author | Klapwijk, T.M. Anissimova, S. Kravchenko, S.V. Dolgopolov, V.T. Shashkin, A.A. Rahimi, Maryam |
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| Cites_doi | 10.1103/PhysRevLett.87.086801 10.1103/PhysRevB.60.4826 10.1134/1.1525041 10.1103/PhysRevLett.29.102 10.1103/PhysRev.46.1002 10.1103/PhysRevB.64.214204 10.1103/RevModPhys.73.251 10.1103/PhysRevLett.88.256601 10.1103/PhysRevB.64.085317 10.1103/PhysRevLett.91.046403 10.1103/PhysRevLett.91.126404 10.1016/S0038-1098(00)00361-6 10.1103/PhysRevB.65.201106 10.1103/PhysRevLett.88.196404 10.1103/PhysRevB.2.4302 10.1103/PhysRevB.39.5005 10.1103/PhysRevB.50.1684 10.1088/0034-4885/11/1/304 10.1103/PhysRevB.43.2174 10.1088/0034-4885/67/1/R01 10.1103/RevModPhys.54.437 10.1103/PhysRevB.66.073303 |
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| Keywords | 73.40. Qv Metal–insulator transition Large g-factor Effective mass 71.30. +h |
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| References | Dolgopolov (BIB9) 2002; 76 Smith, Stiles (BIB17) 1972; 29 Stoner (BIB3) 1947; 11 Wigner (BIB2) 1934; 46 Shashkin, Rahimi, Anissimova, Kravchenko, Dolgopolov, Klapwijk (BIB11) 2003; 91 Zala, Narozhny, Aleiner (BIB15) 2001; 64 Abrahams, Kravchenko, Sarachik, Kravchenko, Sarachik (BIB1) 2001; 73 Attaccalite, Moroni, Gori-Giorgi, Bachelet (BIB6) 2002; 88 Khrapai, Shashkin, Dolgopolov (BIB18) 2003; 91 Kravchenko, Shashkin, Bloore, Klapwijk (BIB12) 2000; 116 Brinkman, Rice (BIB19) 1970; 2 Iwamoto, Kwon, Ceperley, Martin, Chen, Raikh (BIB7) 1991; 43 Tanatar, Ceperley (BIB5) 1989; 39 Shashkin, Kravchenko, Dolgopolov, Klapwijk, Shashkin, Kravchenko, Dolgopolov, Klapwijk (BIB10) 2001; 87 Pudalov, Gershenson, Kojima, Butch, Dizhur, Brunthaler, Prinz, Bauer (BIB14) 2002; 88 Spivak (BIB8) 2001; 64 Vitkalov, Sarachik, Klapwijk (BIB13) 2002; 65 Landau (BIB4) 1957; 3 Ando, Fowler, Stern (BIB16) 1982; 54 Kravchenko (10.1016/j.physe.2003.11.254_BIB12) 2000; 116 Wigner (10.1016/j.physe.2003.11.254_BIB2) 1934; 46 Shashkin (10.1016/j.physe.2003.11.254_BIB10_1) 2001; 87 Attaccalite (10.1016/j.physe.2003.11.254_BIB6) 2002; 88 Vitkalov (10.1016/j.physe.2003.11.254_BIB13) 2002; 65 Smith (10.1016/j.physe.2003.11.254_BIB17) 1972; 29 Iwamoto (10.1016/j.physe.2003.11.254_BIB7_1) 1991; 43 Ando (10.1016/j.physe.2003.11.254_BIB16) 1982; 54 Abrahams (10.1016/j.physe.2003.11.254_BIB1_1) 2001; 73 Kwon (10.1016/j.physe.2003.11.254_BIB7_2) 1994; 50 Brinkman (10.1016/j.physe.2003.11.254_BIB19) 1970; 2 Spivak (10.1016/j.physe.2003.11.254_BIB8) 2001; 64 Landau (10.1016/j.physe.2003.11.254_BIB4) 1957; 3 Pudalov (10.1016/j.physe.2003.11.254_BIB14) 2002; 88 Dolgopolov (10.1016/j.physe.2003.11.254_BIB9) 2002; 76 Shashkin (10.1016/j.physe.2003.11.254_BIB11) 2003; 91 Stoner (10.1016/j.physe.2003.11.254_BIB3) 1947; 11 Shashkin (10.1016/j.physe.2003.11.254_BIB10_2) 2002; 66 Tanatar (10.1016/j.physe.2003.11.254_BIB5) 1989; 39 Khrapai (10.1016/j.physe.2003.11.254_BIB18) 2003; 91 Zala (10.1016/j.physe.2003.11.254_BIB15) 2001; 64 Kravchenko (10.1016/j.physe.2003.11.254_BIB1_2) 2004; 67 Chen (10.1016/j.physe.2003.11.254_BIB7_3) 1999; 60 |
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g factor in strongly interacting two-dimensional systems in silicon. A sharp increase of the effective... |
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| SubjectTerms | Effective mass Large g-factor Metal–insulator transition |
| Title | Sharply increasing effective mass near the 2D metal–insulator transition |
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