Sharply increasing effective mass near the 2D metal–insulator transition

We report measurements of the effective mass and Landé g factor in strongly interacting two-dimensional systems in silicon. A sharp increase of the effective mass has been observed near the metal–insulator transition, while the g factor remained nearly constant and close to its value in bulk silicon...

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Bibliographic Details
Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 22; no. 1; pp. 224 - 227
Main Authors Shashkin, A.A., Rahimi, Maryam, Anissimova, S., Kravchenko, S.V., Dolgopolov, V.T., Klapwijk, T.M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2004
Subjects
Effective mass
Large g-factor
Metal–insulator transition
73.40. Qv
Metal–insulator transition
Large g-factor
Effective mass
71.30. +h
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Summary:We report measurements of the effective mass and Landé g factor in strongly interacting two-dimensional systems in silicon. A sharp increase of the effective mass has been observed near the metal–insulator transition, while the g factor remained nearly constant and close to its value in bulk silicon. Furthermore, the enhanced effective mass has been found to be independent of the degree of spin polarization, which points to a spin-independent origin of the mass enhancement, in contradiction with existing theories.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2003.11.254