Microstructural and optical properties of strain compensated InxGa1-xAs/InyAl1-yAs multiple quantum wells

• Published in: The Journal of physics and chemistry of solids Vol. 63; no. 1; pp. 89 - 93
• Main Authors: KIM, T. W, LEE, D. U, CHOO, D. C
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier 01.01.2002
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Quantum wells; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Aluminium arsenides; Gallium arsenides; Inorganic compounds; Ternary compounds; Multiple quantum well; Photocurrents; Indium arsenides; Excitons; Transmission electron microscopy; X-ray absorption spectra; Strains; Semiconductor quantum wells; Electric field effects; Electro-optical effects; Optical properties; Absorption spectra; Crystal structure
• ISSN: 0022-3697; 1879-2553
• DOI: 10.1016/S0022-3697(01)00082-8

TEM and photocurrent (PC) measurements were carried out to investigate the microstructural and excitonic transitions in In0.52Ga0.48As /In0.55Al0.45As multiple quantum wells (MQWs). TEM images showed that high-quality 11-period strain-compensated In0.52Ga0.48As /In0.55Al0.45As MQWs had high-quality heterointerfaces. Based on the TEM results, a possible crystal structure for the In0.52Ga0.48As /In0.55Al0.45As MQWs is presented, and their strains are compensated. The results for the PC data at 300K for several applied electric fields showed that several excitonic transitions shifted to longer wavelengths as the applied electric field increased. These results indicate that the strain-compensated In0.52Ga0.48As/In0.55Al0.45As MQWs hold promise for electroabsorption modulator devices. 16 refs.