Quantum State in Solid-Phase Crystallization of a-Si:H by FA
Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temper...
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Published in | Applied Mechanics and Materials Vol. 44-47; pp. 4154 - 4156 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Zurich
Trans Tech Publications Ltd
01.01.2011
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Subjects | |
Online Access | Get full text |
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Summary: | Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature. |
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Bibliography: | Selected, peer reviewed papers from the 2010 International Conference on Frontiers of Manufacturing and Design Science (ICFMD 2010), Chonqqing, China, December 11-12, 2010 |
ISBN: | 3037850043 9783037850046 |
ISSN: | 1660-9336 1662-7482 1662-7482 |
DOI: | 10.4028/www.scientific.net/AMM.44-47.4154 |