Quantum State in Solid-Phase Crystallization of a-Si:H by FA

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temper...

Full description

Saved in:
Bibliographic Details
Published inApplied Mechanics and Materials Vol. 44-47; pp. 4154 - 4156
Main Authors Han, Xiang Ju, Lu, Jing Xiao, Chen, Lan Li, Jin, Rui Min, Li, Ding Zhen
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.01.2011
Subjects
Grain Size
Furnace Annealing
PECVD
a-Si: H Film
Online AccessGet full text

Cover

More Information
Summary:Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by conventional furnace annealing (FA) at different temperatures. From the Raman spectra and scanning electronic microscope (SEM), it is found that the thin film grain size present quantum states with annealing temperature.
Bibliography:Selected, peer reviewed papers from the 2010 International Conference on Frontiers of Manufacturing and Design Science (ICFMD 2010), Chonqqing, China, December 11-12, 2010
ISBN:3037850043
9783037850046
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.44-47.4154