High Speed F-N Operated Volatile Memory Cell with Stacked Plasma Enhanced Chemical Vapor Deposition (PECVD) Nanocrystalline Si Layer Structure

• Published in: Japanese Journal of Applied Physics Vol. 37; no. 12B; p. L1517
• Main Authors: Shen, Shih-Jye, Lin, Chrong-Jung, Hsu, Charles Ching-Hsiang
• Format: Journal Article
• Language: English
• Published: 15.12.1998

A volatile memory structure with nanocrystalline Si (nc-Si) layer and auxiliary floating polysilicon gate is proposed. The charges are injected through tunnel oxide and nc-Si layer by Fowler-Nordheim (F-N) tunneling and then stored in the stacked structure. The nc-Si layer improves programming speed...