High Speed F-N Operated Volatile Memory Cell with Stacked Plasma Enhanced Chemical Vapor Deposition (PECVD) Nanocrystalline Si Layer Structure

A volatile memory structure with nanocrystalline Si (nc-Si) layer and auxiliary floating polysilicon gate is proposed. The charges are injected through tunnel oxide and nc-Si layer by Fowler-Nordheim (F-N) tunneling and then stored in the stacked structure. The nc-Si layer improves programming speed...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 37; no. 12B; p. L1517
Main Authors Shen, Shih-Jye, Lin, Chrong-Jung, Hsu, Charles Ching-Hsiang
Format Journal Article
LanguageEnglish
Published 15.12.1998
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Summary:A volatile memory structure with nanocrystalline Si (nc-Si) layer and auxiliary floating polysilicon gate is proposed. The charges are injected through tunnel oxide and nc-Si layer by Fowler-Nordheim (F-N) tunneling and then stored in the stacked structure. The nc-Si layer improves programming speed during F-N operation and the extended structure with floating gate improves the limited charge storage volume and makes the memory device with distinct threshold voltage window. The reliability of this cell is shown to be sufficient for using as dynamic memory.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L1517