Low-Damage Gate Etching with High Degree of Anisotropy in High-Density DRAM Cell

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 41; no. Part 1, No. 4B; pp. 2380 - 2384
Main Authors Kim, Il-Gweon, Kim, Nam-Sung, Park, Joo-Seog, Park, Dae-Young
Format Journal Article
LanguageEnglish
Published 01.04.2002
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.41.2380