Excess low frequency noise/I-V studies in p-on-n MBE LWIR Hg1−xCdxTe detectors

• Published in: Journal of electronic materials Vol. 28; no. 6; pp. 611 - 616
• Main Authors: D’Souza, A. I., Wijewarnasuriya, P. S., Dewames, R. E., Hildebrandt, G., Bajaj, J., Edwall, D. D., Pasko, J. G., Arias, J. M.
• Format: Journal Article
• Language: English
• Published: Warrendale Springer Nature B.V 01.06.1999
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-999-0043-9

Excess low-frequency noise in ir MBE-grown LWIR Hg1-xCdxTe double-layer planar heterostructure (DLPH) detectors grown on lattice-matched substrates is studied to determine the dominant mechanisms impacting detector noise. Detectors having a wide range of performance were characterized for I-V, R sub0 A subopt, and noise as a function of temperature. A subopt is determined using a combination of spot and flood illumination measurements. A correlation between dark current and noise was demonstrated in that the excess low- frequency noise was proportional to the total dark current and not just a single component of the dark current. In addition, the effect of defects as observed visually prior to and following a defect-etch on detector dark current and noise are presented. 15 refs.