Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy

• Published in: IEEE journal of quantum electronics Vol. 26; no. 8; pp. 1323 - 1327
• Main Authors: Tanbun-Ek, T., Logan, R.A., Temkin, H., Chu, S.N.G., Olsson, N.A., Sergent, A.M., Wecht, K.W.
• Format: Journal Article
• Language: English
• Published: IEEE 01.08.1990
• Subjects: Carrier confinement; Coatings; Electron optics; Mass spectroscopy; Optical waveguides; Particle beam optics; Quantum well lasers; Threshold current; Transmission electron microscopy; Waveguide lasers
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/3.59676

A report is presented on the growth and characterization of the first InGaAs-InP-based graded-index separate-confinement-heterostructure (GRIN-SCH) strained quantum-well lasers operating near 1.47 mu m. The structure features linearly graded InGaAsP waveguide layers for both optical and carrier confinement in a very narrow, strained quantum-well layers. The excellent structural quality of the active and waveguide regions has been confirmed by transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) analysis results. Strained quantum-well lasers with well widths as narrow as 5-6 nm were fabricated with threshold current densities as low as 750 A/cm/sup 2/. Buried-heterostructure lasers based on strained quantum-well active lasers exhibit threshold currents as low as 10-15 mA with quantum efficiency of 70-80%. With antireflection coating on one side of the sample, the laser shows threshold current of 35 mA with highest output power of 160 mW.< >