InAs/GaSb/AlSb resonant tunneling spin device concepts

We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 A ̊ semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.

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Bibliographic Details
Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 20; no. 3; pp. 350 - 354
Main Authors Ting, David Z.-Y., Cartoixà, Xavier
Format Journal Article
LanguageEnglish
Published Elsevier B.V 2004
Subjects
Bulk inversion asymmetry
Rashba effect
Resonant tunneling
Spin filter
Spin pump
Structural inversion asymmetry
Rashba effect
73.40.Gk
Structural inversion asymmetry
72.25.Mk
72.25.HG
Bulk inversion asymmetry
Spin pump
Spin filter
Resonant tunneling
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Summary:We discuss device concepts for creating spin-polarized current sources without external magnetic fields, using non-magnetic 6.1 A ̊ semiconductor resonant tunneling structures. Spin filters, spin pumps, and spin transistors that exploit structural and bulk inversion asymmetries will be examined.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2003.08.032