Mesoscopic Variance of Dislocation Displacements in Crystalline Materials

It is shown that a large variance of dislocation displacements found experimentally and its long relaxation to a steady value in semiconductor materials can be explained by the stochastic nature of the dislocation-kink formation. This stochastic nature results in the development of dislocation line...

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Bibliographic Details
Published inProcedia engineering Vol. 10; pp. 1262 - 1267
Main Author Petukhov, B.V.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 2011
Subjects
Dislocation dynamics
statistical properties of dislocation profile
stochastic kink pair formation
stochastic kink pair formation
statistical properties of dislocation profile
Dislocation dynamics
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Summary:It is shown that a large variance of dislocation displacements found experimentally and its long relaxation to a steady value in semiconductor materials can be explained by the stochastic nature of the dislocation-kink formation. This stochastic nature results in the development of dislocation line roughness described by the scaling relations, including the mesoscopic time and space scales. Mapping the problem onto the well-examined polynuclear growth model provides a comprehensive description of the self-similar evolution of dislocation shapes and enables to estimate dislocation dynamics parameters.
ISSN:1877-7058
1877-7058
DOI:10.1016/j.proeng.2011.04.210