Investigation of Surface Pits Originating in Dislocations in AlGaN/GaN Epitaxial Layer Grown on Si Substrate with Buffer Layer

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 45; no. 4R; p. 2531
Main Authors Sasaki, Hitoshi, Kato, Sadahiro, Matsuda, Takeyoshi, Sato, Yoshihiro, Iwami, Masayuki, Yoshida, Seikoh
Format Journal Article
LanguageEnglish
Published 01.04.2006
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.2531