Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
We report on a novel method of fabricating 10-nm-scale GaAs dot structures using molecular beam epitaxy and in situ gas etching. Self-assembled nanometer-scale InAs dots are formed first and are used as masks for the subsequent etching of GaAs by Cl 2 gas. In this approach, we also make use of HCl g...
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Published in | Japanese Journal of Applied Physics Vol. 34; no. 9B; p. L1198 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
1995
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Online Access | Get full text |
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