Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask

We report on a novel method of fabricating 10-nm-scale GaAs dot structures using molecular beam epitaxy and in situ gas etching. Self-assembled nanometer-scale InAs dots are formed first and are used as masks for the subsequent etching of GaAs by Cl 2 gas. In this approach, we also make use of HCl g...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 34; no. 9B; p. L1198
Main Authors Go Yusa, Go Yusa, Hiroshi Noge, Hiroshi Noge, Yutaka Kadoya, Yutaka Kadoya, Takao Someya, Takao Someya, Tadatomo Suga, Tadatomo Suga, Pierre Petroff, Pierre Petroff, Hiroyuki Sakaki, Hiroyuki Sakaki
Format Journal Article
LanguageEnglish
Published 1995
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Summary:We report on a novel method of fabricating 10-nm-scale GaAs dot structures using molecular beam epitaxy and in situ gas etching. Self-assembled nanometer-scale InAs dots are formed first and are used as masks for the subsequent etching of GaAs by Cl 2 gas. In this approach, we also make use of HCl gas etching to remove selectively the InAs wetting layer as well as the InAs dots to yield clean and strain-free GaAs dot structures. The height and base diameter of resultant GaAs dots are studied by atomic force microscopy and found to be 10±2 nm and 30±5 nm, respectively.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.34.L1198