Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask

• Published in: Japanese Journal of Applied Physics Vol. 34; no. 9B; p. L1198
• Main Authors: Go Yusa, Go Yusa, Hiroshi Noge, Hiroshi Noge, Yutaka Kadoya, Yutaka Kadoya, Takao Someya, Takao Someya, Tadatomo Suga, Tadatomo Suga, Pierre Petroff, Pierre Petroff, Hiroyuki Sakaki, Hiroyuki Sakaki
• Format: Journal Article
• Language: English
• Published: 1995
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.34.L1198

We report on a novel method of fabricating 10-nm-scale GaAs dot structures using molecular beam epitaxy and in situ gas etching. Self-assembled nanometer-scale InAs dots are formed first and are used as masks for the subsequent etching of GaAs by Cl 2 gas. In this approach, we also make use of HCl gas etching to remove selectively the InAs wetting layer as well as the InAs dots to yield clean and strain-free GaAs dot structures. The height and base diameter of resultant GaAs dots are studied by atomic force microscopy and found to be 10±2 nm and 30±5 nm, respectively.