Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric

The operating characteristics of flash memory devices with tunnel dielectrics comprising a silicon nitride layer or a silicon nitride/silicon dioxide (N/O) stack and annealed at various temperatures are studied. The present work indicates that flash memory devices with an N/O stack tunnel dielectric...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 44; no. 3L; p. L435
Main Authors Lai, Hsiang-Yueh, Chang-Liao, Kuei-Shu, Wang, Tien-Ko, Sung, Chao-Feng
Format Journal Article
LanguageEnglish
Published 01.01.2005
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Summary:The operating characteristics of flash memory devices with tunnel dielectrics comprising a silicon nitride layer or a silicon nitride/silicon dioxide (N/O) stack and annealed at various temperatures are studied. The present work indicates that flash memory devices with an N/O stack tunnel dielectric have a higher program/erase speed and reliability than those with a single Si 3 N 4 layer. The stack tunnel dielectric composed of a thick Si 3 N 4 layer and a thin SiO 2 layer exhibits even better performance for flash memory operation. Flash memory devices having N/O stack tunnel dielectrics annealed at low temperatures show better performance in terms of erase speed and charge retention but poor robustness under read disturbance.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.44.L435