Improving Spatial and Elemental Associations in Analytical Field Ion Microscopy

Abstract Chemically resolved atomic resolution imaging can give fundamental information about material properties. However, even today, a technique capable of such achievement is still only an ambition. Here, we take further steps in developing the analytical field ion microscopy (aFIM), which combi...

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Published inMicroscopy and microanalysis Vol. 29; no. 3; pp. 1077 - 1086
Main Authors F. Morgado, Felipe, Stephenson, Leigh, Rousseau, Loic, Vurpillot, François, Evertz, Simon, Schneider, Jochen M, Gault, Baptiste
Format Journal Article
LanguageEnglish
Published Cambridge University Press 09.06.2023
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Summary:Abstract Chemically resolved atomic resolution imaging can give fundamental information about material properties. However, even today, a technique capable of such achievement is still only an ambition. Here, we take further steps in developing the analytical field ion microscopy (aFIM), which combines the atomic spatial resolution of field ion microscopy (FIM) with the time-of-flight spectrometry of atom probe tomography (APT). To improve the performance of aFIM that are limited in part by a high level of background, we implement bespoke flight path time-of-flight corrections normalized by the ion flight distances traversed in electrostatic simulations modeled explicitly for an atom probe chamber. We demonstrate effective filtering in the field evaporation events upon spatially and temporally correlated multiples, increasing the mass spectrum's signal-to-background. In an analysis of pure tungsten, mass peaks pertaining to individual W isotopes can be distinguished and identified, with the signal-to-background improving by three orders of magnitude over the raw data. We also use these algorithms for the analysis of a CoTaB amorphous film to demonstrate application of aFIM beyond pure metals and binary alloys. These approaches facilitate elemental identification of the FIM-imaged surface atoms, making analytical FIM more precise and reliable.
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ISSN:1431-9276
1435-8115
DOI:10.1093/micmic/ozad039