Characterization of absorption bands in Ti:sapphire crystals

We have measured and characterized, over a wide range of doping levels, the UV-near-IR (190-2000-nm) absorption properties of Ti:sapphire crystals. We find that the strengths of absorption centered around 400-450 and 268 nm depend on the square of the Ti3+ doping level, suggesting an origin from pai...

Full description

Saved in:
Bibliographic Details
Published inOptical materials express Vol. 9; no. 5; p. 2216
Main Authors Moulton, Peter F., Cederberg, Jeffrey G., Stevens, Kevin T., Foundos, Greg, Koselja, Michal, Preclikova, Jana
Format Journal Article
LanguageEnglish
Published Washington Optical Society of America 01.05.2019
Subjects
Absorption spectra
Charge transfer
Data transfer (computers)
Doping
Level (quantity)
Sapphire
Online AccessGet full text

Cover

More Information
Summary:We have measured and characterized, over a wide range of doping levels, the UV-near-IR (190-2000-nm) absorption properties of Ti:sapphire crystals. We find that the strengths of absorption centered around 400-450 and 268 nm depend on the square of the Ti3+ doping level, suggesting an origin from pairs of Ti3+ ions. In addition, we have identified an absorption feature below 210 nm due to Ti3+, rather than Ti4+ charge-transfer transitions. Finally, our data on 800-nm-peak, near-IR absorption shows a complex lineshape, with a lower limit set by Ti3+ pair absorption. Thus the maximum possible Figure-of-Merit for Ti:sapphire reduces as the doping level increases.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.9.002216