Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y2O3‐AlN additives were sintered without any applied pressure at temperatures of 1900‐2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 101 to 1.9 × 10−2 Ω·cm as the sintering temperature increased from 1900 to...

Full description

Saved in:
Bibliographic Details
Published inInternational journal of applied ceramic technology Vol. 16; no. 2; pp. 843 - 849
Main Authors Kim, Yong‐Hyeon, Kim, Young‐Wook, Kim, Kwang Joo
Format Journal Article
LanguageEnglish
Published Malden Wiley Subscription Services, Inc 01.03.2019
Subjects
Additives
Carrier density
Ceramics
electrical properties
Electrical resistivity
grain growth
Loose powder sintering
Nitrogen
pressureless sintering
Silicon carbide
Sintering
Yttrium oxide
Online AccessGet full text

Cover

More Information
Summary:Polycrystalline SiC ceramics with 10 vol% Y2O3‐AlN additives were sintered without any applied pressure at temperatures of 1900‐2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 101 to 1.9 × 10−2 Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain‐growth‐induced N‐doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω−1·cm−1 at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid‐phase sintered SiC ceramics.
ISSN:1546-542X
1744-7402
DOI:10.1111/ijac.13131