On the mechanism of creating pinched hysteresis loops using a commercial memristor device

• Published in: International journal of electronics and communications Vol. 111; p. 152923
• Main Authors: Majzoub, S., Elwakil, A.S., Psychalinos, C., Maundy, B.J.
• Format: Journal Article
• Language: English
• Published: Elsevier GmbH 01.11.2019
• ISSN: 1434-8411; 1618-0399
• DOI: 10.1016/j.aeue.2019.152923

In this short communication we analyze the impact of signal harmonics on the formation of the pinched hysteresis loop using a commercial memristor device. We show that by using only the fundamental frequency and the second harmonic components, extracted from the measured electrical current signal, a distortion-less pinched hysteresis loop is re-created. This loop is then used to simulate memristor-based AND/OR gates without any loss in digital functionality. This verifies that the generation of a pinched hysteresis loop requires a nonlinear frequency doubling mechanism to create a second harmonic in the current signal from an applied single frequency voltage excitation. Obtaining a pinched loop with three pinch points from the experimentally measured data is also demonstrated.