Methylammonium lead tribromide semiconductors: Ionizing radiation detection and electronic properties

The response of single crystal methylammonium lead tribromide (MAPbBr3 or MAPB) semiconductors to alpha particles at low voltage is presented. Through analysis of the preamplifier traces induced by 210Po alpha particles and collecting holes, we were able to determine the mobility–lifetime product, a...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 927; pp. 401 - 406
Main Authors Lukosi, Eric, Smith, Travis, Tisdale, Jeremy, Hamm, Daniel, Seal, Cody, Hu, Bin, Ahmadi, Mahshid
Format Journal Article
LanguageEnglish
Published Elsevier B.V 21.05.2019
Subjects
Alpha detection
MAPB
MAPbBr3
Neutron detection
Radiation detection
Semiconductor detector
Alpha detection
MAPbBr3
Semiconductor detector
Radiation detection
MAPB
Neutron detection
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Summary:The response of single crystal methylammonium lead tribromide (MAPbBr3 or MAPB) semiconductors to alpha particles at low voltage is presented. Through analysis of the preamplifier traces induced by 210Po alpha particles and collecting holes, we were able to determine the mobility–lifetime product, apparent mobility, trapping time constant, and the detrapping time constant. In addition, a quantitative study of the rate of positive polarization and device breakdown time at different applied voltages is presented. Finally, using a 239Pu/Be fast neutron source, we were able to demonstrate the response of MAPB to fast neutrons for the first time via benchmarking experiment with Monte Carlo simulations.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2019.02.059