Nonlinear electronic stopping power of channeled slow light ions in ZnSe: Evidence of energy loss caused by formation and breaking of chemical bond

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 426; pp. 41 - 45
• Main Authors: Li, Chang-kai, Wang, Feng, Gao, Cong-Zhang, Liao, Bin, Ouyang, Xiao-ping, Zhang, Feng-Shou
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.07.2018
• Subjects: Charge transfer; Chemical bond; Electronic stopping power; TDDFT; Electronic stopping power; Charge transfer; Chemical bond; TDDFT
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2018.04.034

Electronic stopping power of helium ions in a semiconductor material ZnSe has been investigated through non-adiabatic dynamics simulations at energies of a few keV under channeling condition. The stopping power is predicted to be proportional to velocity for the trajectory along middle axis of a 〈110〉 channel, as expected for the linear response theory accounts for election-hole pair creation. While for the off-center channeling trajectory, a counterintuitive of electronic stopping power versus velocity is observed. Our study, presented herein, finds a non-trivial connection between charge transfer and the force experienced by the projectile. Charge transfer can produce, throughout the collision process, additional force by continuously forming and breaking instantaneous chemical bonds between the projectile and the neighboring host atoms.