Technology development for SOI monolithic pixel detectors

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 560; no. 1; pp. 26 - 30
• Main Authors: Marczewski, J., Domanski, K., Grabiec, P., Grodner, M., Jaroszewicz, B., Kociubinski, A., Kucharski, K., Tomaszewski, D., Caccia, M., Kucewicz, W., Niemiec, H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2006
• Subjects: Position pixel detector; Silicon on insulator technology; Silicon radiation detectors; Silicon on insulator technology; 89.20.Bb; Silicon radiation detectors; 29.40.Gx; 73.40.Ty; Position pixel detector
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2005.11.194

A monolithic detector of ionizing radiation has been manufactured using silicon on insulator (SOI) wafers with a high-resistivity substrate. In our paper the integration of a standard 3 μm CMOS technology, originally designed for bulk devices, with fabrication of pixels in the bottom wafer of a SOI substrate is described. Both technological sequences have been merged minimizing thermal budget and providing suitable properties of all the technological layers. The achieved performance proves that fully depleted monolithic active pixel matrix might be a viable option for a wide spectrum of future applications.