Design and performance analysis of Dual-Gate All around Core-Shell Nanotube TFET

In this research work, we have put forward Silicon based Nanotube structure with Dual Gate All around configuration. The proposed device has been compared with Conventional Nanowire structure and the comparison is concocted on account of analog parameters of both the devices. The structural paramete...

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 125; pp. 356 - 364
Main Authors Kumar, Naveen, Mushtaq, Umar, Amin, S. Intekhab, Anand, Sunny
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.2019
Subjects
Core and shell gates
Dual-Gate All around
Nanotube
Nanowire
TFET
Nanowire
Dual-Gate All around
Core and shell gates
TFET
Nanotube
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Summary:In this research work, we have put forward Silicon based Nanotube structure with Dual Gate All around configuration. The proposed device has been compared with Conventional Nanowire structure and the comparison is concocted on account of analog parameters of both the devices. The structural parameters of both the devices are kept identical like work function, doping concentrations of Source, Channel and Drain regions. By using an inner core gate and an outer shell gate, the proposed device exhibited superior Analog characteristics over its Nanowire counterpart in terms of drive current (ION), Electrical criteria, capacitance, unity gain, and transconductance. •Dual Gate All around configuration over Tunnel FET is proposed and investigated.•Various analog/RF and process parameters are extracted and discussed.•Compared with Conventional Nanowire structure.
ISSN:0749-6036
1096-3677
DOI:10.1016/j.spmi.2018.09.012