Preparation of vertically aligned GaN@Ga2O3 core-shell heterostructured nanowire arrays and their photocatalytic activity for degradation of Rhodamine B

• Published in: Superlattices and microstructures Vol. 143; p. 106556
• Main Authors: Zhang, Liying, Li, Yuewen, Xiu, Xiangqian, Xin, Guoqing, Xie, Zili, Tao, Tao, Liu, Bin, Chen, Peng, Zhang, Rong, Zheng, Youdou
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.07.2020
• Subjects: Core-shell structure; Ga2O3; GaN; Nanowire arrays; Photocatalytic activity; Rhodamine B; Photocatalytic activity; Ga2O3; Core-shell structure; Rhodamine B; GaN; Nanowire arrays
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2020.106556

In this paper, vertically aligned GaN@Ga2O3 core-shell heterostructured nanowire arrays have been fabricated by thermal oxidation of GaN nanowire arrays. GaN nanowire arrays have been prepared by inductively coupled plasma etching. The GaN@Ga2O3 nanowire arrays have the good morphology and the thickness of the Ga2O3 shell can be controlled by the oxidation duration and temperature. The photocatalytic activity of vertically aligned GaN@Ga2O3 nanowires has been first evaluated by the degradation of Rhodamine B solution. Compared with the original GaN nanowires and the oxidized Ga2O3 nanowires, GaN@Ga2O3 nanowires exhibit superior photocatalytic activity. This finding suggests that GaN nanowire arrays with enhanced photocatalytic activity could be obtained by construct heterostructured GaN-based nanocomposite, which provides a new possibility for photocatalytic applications. Vertically aligned GaN@Ga2O3 NAs have been fabricated by thermally oxidizing GaN NAs and the core-shell NAs exhibited enhanced photodegradation rate of Rhodamine B. [Display omitted] •Vertically aligned GaN@Ga2O3 NAs have been obtained by thermally oxidizing GaN NAs.•The Ga2O3 shell thickness can be controlled by oxidizing temperature and time.•The core-shell NAs showed the best photodegradation efficiency of Rhodamine B.