Investigation of electrical properties in AB-Stacked bilayer Graphene-DNA nanostructures

• Published in: Superlattices and microstructures Vol. 130; pp. 182 - 193
• Main Authors: Mohammadi, Saeedeh, Khoeini, Farhad, Esmailpour, Mohammad, Khalkhali, Maryam
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2019
• Subjects: DNA molecule; Electrical properties; Greens function method; Nanoribbon AB-Stacked bilayer graphene; DNA molecule; Electrical properties; Nanoribbon AB-Stacked bilayer graphene; Greens function method
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2019.04.029

In this paper, we study electrical properties of AB-stacked bilayer graphene-DNA hybrid nanostructure connected to two semi-infinite monolayer graphene nanoribbon leads. We investigated two types of devices with both zigzag and armchair edges and the results are evaluated by replacing the junction position. Our calculations are based on the tight-binding approximation and the Green's function method in which the electrical transmission, the density of states (DOS) and the local density of states (LDOS) are calculated numerically. In the metallic bilayer graphene device via creating a nanopore and translocating the DNA molecule, the electron transmission reduces and an energy gap opens, so that, the metal-semiconductor phase transition occurs. Also, our results indicate that the model AC leads to a more considerable energy gap than model AB. Our results have important applications in DNA sensing. .•The electron transmission, electron density of states and local density of states of AB-stacked bilayer graphene-DNA hybrid nanostructure (zigzag and armchair edges) connected to two metallic monolayer graphene nanoribbon leads, have been calculated.•By creating translocating DNA molecule in bilayer graphene nanostructures, the electron transmission decreased and energy gap was opened.•We indicated that the model AC causes a more considerable energy gap than model AB.•Results have important application for DNA sensing.