Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 253; no. 1-2; pp. 126 - 129
• Main Authors: Ulyashin, A.G., Christensen, J.S., Svensson, B.G., Kögler, R., Skorupa, W.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2006
• Subjects: Deuterium; Gettering; Hydrogen; Silicon; SIMS; Deuterium; 61.72.Yx; Hydrogen; Silicon; SIMS; Gettering; 61.72.Tt
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2006.10.048

In this study gettering of atomic hydrogen in-diffused from a plasma hydrogenated surface into self ion implanted and annealed Si is investigated. Cz Si p-type samples were implanted with 3.5MeV Si+ ions to a fluence 5×1015cm−2 and then annealed at 900°C. The hydrogenation of the samples was performed by exposure to the direct RF hydrogen plasma in a plasma enhanced chemical vapour deposition (PECVD) reactor. A remote deuterium plasma treatment was used as well. Secondary ion mass spectrometry (SIMS) was employed for analysis of the hydrogen/deuterium distributions. It is demonstrated for the first time that accumulation of diffused hydrogen occurs both at the projected range of the silicon ions, Rp, and at Rp/2. It is shown that hydrogen accumulation by vacancy-type defects at Rp/2 is as efficient as for trapping by dislocations at Rp.