White electroluminescence of diamond/boron/diamond/SrTiO3 composite film
Diamond/boron/diamond/SrTiO3 composite film (BDDSCF) electroluminescent (EL) devices were deposited by microwave plasma chemical vapor deposition (MPCVD) technology and vacuum electron beam vapor deposition (EBVD) technology. The samples were characterized by field emission scanning electron microsc...
Saved in:
Published in | Materials science in semiconductor processing Vol. 159; p. 107382 |
---|---|
Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.06.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Diamond/boron/diamond/SrTiO3 composite film (BDDSCF) electroluminescent (EL) devices were deposited by microwave plasma chemical vapor deposition (MPCVD) technology and vacuum electron beam vapor deposition (EBVD) technology. The samples were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive spectroscopy (EDXS). The current-voltage (I–V) characteristic of the sample was measured by an adjustable direct current power supply. The EL spectra of the samples obviously exhibit three emission peaks, which are centered at 440 nm (blue area), 592 nm (yellow area) and 736 nm (red area). In the indoor environment, it can be observed by the naked eye that the surface of the sample will emit uniform and high brightness white light. The blue peak is from the recombination of the conduction band electron in SrTiO3 film and the quasi-acceptor (trapped hole) associated with oxygen vacancy, the yellow peak is caused by the self-trapping exciton (STE) recombination caused by oxygen vacancies in SrTiO3, and the red peak is attributed to the silicon impurity centers or carbon neutral vacancy in diamond films.
•Diamond/boron/diamond/SrTiO3 composite film high-brightness white light-emitting device was made for the first time.•The emission peaks in EL spectrum were found at 436 nm, 592 nm and 708 nm, respectively.•This study provides a promising new idea for the development of other non-GaN based white electroluminescence. |
---|---|
ISSN: | 1369-8001 1873-4081 |
DOI: | 10.1016/j.mssp.2023.107382 |