Spintronics – A mini review

• Published in: Superlattices and microstructures Vol. 136; p. 106322
• Main Authors: Chandrasekar, L. Bruno, Gnanasekar, K., Karunakaran, M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.12.2019
• Subjects: Heterostructure; Spin FET; Spin seebeck effect; Spin transfer torque; Heterostructure; Spin seebeck effect; Spin FET; Spin transfer torque
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2019.106322

Over the last decade, the construction and analysis of spintronic devices have been explored. This mini-review focuses on the basic spintronic phenomena such as giant magnetoresistance, tunnel magnetoresistance, spin transfer torque, spin Hall effect, spin Seebeck effect and BGKC (Bruno – Gnanasekar – Karunakaran – Chandramohan) observation. The mechanism of spin-orbit interaction is theoretically discussed. The in-plane wave vector, magnetic field, bias voltage and the delta potential are influenced on spin-polarized transport in heterostructures. The comparison between the role of Dresselhaus and Rashba spin-orbit interaction in the heterostructure is investigated. The principle of spintronic devices (sensors, magnetic random access memory, unipolar spin diode, spin photodiode, spin LED, spin solar cell, spin FET) and spintronic instruments (spin SEM, spin STM) are also explained. •This mini-review focuses on the basic spintronic phenomena.•The mechanism of Dresselhaus and Rashba spin-orbit interactions are discussed.•The effects of the in-plane wave vector, external field on spin-polarized transport are discussed.•The principles of spintronic devices and instruments are explained.