Control of short-channel effects in InAlN/GaN high-electron mobility transistors using graded AlGaN buffer

• Published in: Superlattices and microstructures Vol. 116; pp. 207 - 214
• Main Authors: Han, Tiecheng, Zhao, Hongdong, Peng, Xiaocan, Li, Yuhai
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2018
• Subjects: Back barrier; Graded AlGaN; HEMT; InAlN/GaN; Short-channel effects; Short-channel effects; Back barrier; Graded AlGaN; InAlN/GaN; HEMT
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2018.02.031

A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes. Based on the two-dimensional device simulator, the effect of the graded AlGaN buffer on the direct-current (DC) and radio-frequency (RF) performance of short-gate InAlN/GaN high-electron mobility transistors (HEMTs) are investigated, theoretically. Compared to standard HEMT, an enhancement of electron confinement and a good control of short-channel effect (SCEs) are demonstrated in the graded AlGaN buffer HEMT. Accordingly, the pinched-off behavior and the ability of gate modulation are significantly improved. And, no serious SCEs are observed in the graded AlGaN buffer HEMT with an aspect ratio (LG/tch) of about 6.7, much lower than that of the standard HEMT (LG/tch = 13). In addition, for a 70-nm gate length, a peak current gain cutoff frequency (fT) of 171 GHz and power gain cutoff frequency (fmax) of 191 GHz are obtained in the grade buffer HEMT, which are higher than those of the standard one with the same gate length. •A graded AlGaN buffer is designed to realize the p-type buffer by inducing polarization-doping holes.•Using a graded AlGaN buffer to control short channel effects in short-gate InAlN/GaN high-electron mobility transistors.•The designed graded AlGaN buffer can effectively enhance the electrons confinement and the ability of controlling short channel effects.