a-SiOx:H passivation layers for Cz-Si wafer deposited by hot wire chemical vapor deposition

• Published in: Materials science in semiconductor processing Vol. 61; pp. 1 - 4
• Main Authors: He, Yuping, Huang, Haibin, Zhou, Lang, Yue, Zhihao, Yuan, Jiren, Zhou, Naigen, Gao, Chao
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2017
• Subjects: a-SiOx:H; Effective lifetime; FTIR; HWCVD; Passivation; SiHx; a-SiOx:H; Effective lifetime; SiHx; FTIR; HWCVD; ε2; Passivation
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2016.12.031

In order to get the high photoelectric conversion efficiency a-Si:H/c-Si solar cells, high quality intrinsic hydrogenated passivation layer between the a-Si:H emitter layer and the c-Si wafer is necessary. In this work, hot wire chemical vapor deposition (HWCVD) is used to deposite intrinsic oxygen-doped hydrogenated amorphous silicon (a-SiOx:H) and hydrogenated amorphous silicon (a-Si:H) films as the intrinsic passivation layer for a-Si:H/c-Si solar cells. The passivation effect of the films on the c-Si surface is shown by the effective lifetime of the samples that bifacial covered by the films with same deposition parameters, tested by QSSPC method. The imaginary part of dielectric constant (ε2) and bonds structure of the layers are analyzed by Spectroscopic Ellipsometry(SE) and Fourier Transfom Infrared Spectroscopy(FTIR). It is concluded that: (1) HWCVD method can be used to make a-SiOx:H films as the passivation layer for a-Si:H/c-Si cells and the oxidation of the filament can be overcome by optimizing the deposition parameters. In our experiments, the lowest surface recombination velocity of the c-Si wafer is 3.0cm/s after a-SiOx:H films passivation. (2) Oxygen-doping in the amorphous silicon layers can increase H content and the band-gap of films, similar as the phenomenon of the films deposited by PECVD.