High energy focused ion beam technology and applications at the Louisiana Accelerator Center

The high energy focused ion beam (HEFIB) system at the Louisiana Accelerator Center (LAC) of the University of Louisiana at Lafayette, Lafayette, USA, is constructed on one of the beamlines of a National Electrostatics Corporation 1.7 MV 5SDH-2 tandem accelerator. The HEFIB system has several compon...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 260; no. 1; pp. 372 - 377
Main Authors Glass, G.A., Dymnikov, A.D., Rout, B., Zachry, D.P.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.07.2007
Subjects
Focused ion beam
Heavy ion beam lithography
Microlithography
Micromachining
P-beam
Microlithography
87.80.Mj
85.40.Hp
85.85.+j
P-beam
Focused ion beam
Micromachining
61.82.Fk
Heavy ion beam lithography
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Summary:The high energy focused ion beam (HEFIB) system at the Louisiana Accelerator Center (LAC) of the University of Louisiana at Lafayette, Lafayette, USA, is constructed on one of the beamlines of a National Electrostatics Corporation 1.7 MV 5SDH-2 tandem accelerator. The HEFIB system has several components, including a versatile magnetic quadrupole sextuplet lens focusing system defined as the Russian magnetic sextuplet (RMS) system having the same demagnifications, the same focal lengths and the same positions of the focal points in xz and yz planes as the Russian quadruplet and a one-piece concrete supporting base and integrated endstation with air isolation. A review of recent microlithography and HEFIB system developments at LAC are presented, as well as new results using heavy ion (HI) beam lithography on crystalline silicon.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2007.02.049