Temperature analysis of Ge/Si heterojunction SOI-Tunnel FET

• Published in: Superlattices and microstructures Vol. 110; pp. 162 - 170
• Main Authors: Chander, Sweta, Sinha, Sanjeet Kumar, Kumar, Sanjay, Singh, Prince Kumar, Baral, Kamalaksha, Singh, Kunal, Jit, Satyabrat
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.2017
• Subjects: Band-to-band tunneling; Heterojunction; Silicon on insulator; Tunnel Field Effect Transistor; Silicon on insulator; Tunnel Field Effect Transistor; Band-to-band tunneling; Heterojunction
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2017.08.048

Temperature is a thermal parameter which affects the device performance. This paper presents the impact of the temperature variation on the electrical characteristics such as tunneling width, subthreshold swing, threshold voltage, and ION/IOFF ratio of Ge/Si heterojunction Silicon on Insulator (SOI) Tunnel Field Effect Transistor (TFET) for different drain voltages. The device exhibits better performance in comparison with homojunction of the same device for different temperatures. This study reveals that OFF current of the device is independent of drain voltage variation irrespective of temperature variation. A small change in the subthreshold swing (SS) with temperature variation shows the weaker dependence of SS on temperature. The analog performance parameters such as transconductance, output transconductance, gate capacitance, and transconductance-to-drain-current ratio of the device are also examined. A small variation in analog parameters with temperature variation shows that the device could be used for the high-temperature analog circuit applications. A broad range of temperature from 200 K to 400 K has been used to analyze the performance of the device using Synopsys Technology Computer Aided Design (TCAD) simulation tool. •Impact of the temperature variation on the electrical characteristics of Ge/Si heterojunction SOI-TFET for different drain voltages is studied.•The device exhibits better performance in comparison with homojunction of the same device for different temperature.•This study reveals that OFF current of the device is independent of drain voltage variation irrespective of temperature variation.•A small variation in analog parameters with temperature variation shows that the device could be used for the high-temperature applications.