Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor
High quality, nanostructured Bi sub(2)Te sub(3), with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that del...
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Published in | Journal of materials chemistry. A, Materials for energy and sustainability Vol. 2; no. 14; pp. 4865 - 4869 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.01.2014
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Online Access | Get full text |
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Summary: | High quality, nanostructured Bi sub(2)Te sub(3), with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that delivers key structural requirements necessary to improve the thermoelectric efficiency of Bi sub(2)Te sub(3) and to develop the nascent field of topological insulators. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/c4ta00341a |