Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor

High quality, nanostructured Bi sub(2)Te sub(3), with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that del...

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Published inJournal of materials chemistry. A, Materials for energy and sustainability Vol. 2; no. 14; pp. 4865 - 4869
Main Authors Benjamin, Sophie L., de Groot, C. H. (Kees), Gurnani, Chitra, Hector, Andrew L., Huang, Ruomeng, Koukharenko, Elena, Levason, William, Reid, Gillian
Format Journal Article
LanguageEnglish
Published 01.01.2014
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Summary:High quality, nanostructured Bi sub(2)Te sub(3), with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that delivers key structural requirements necessary to improve the thermoelectric efficiency of Bi sub(2)Te sub(3) and to develop the nascent field of topological insulators.
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ISSN:2050-7488
2050-7496
DOI:10.1039/c4ta00341a