Modeling and simulation analysis of SiGe heterojunction Double Gate Vertical t-shaped tunnel FET

• Published in: Superlattices and microstructures Vol. 142; p. 106496
• Main Authors: Singh, Shailendra, Raj, Balwinder
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2020
• Subjects: Poisson's equation; Band-2-band tunneling (B2BT); Double-gate vertical t-shaped TFET (DG V t-TFET); Parabolic approximation; Analytical modelling; Subthreshold slope (SS); Surface potential

This paper deals with a new 2-D analytical surface potential model for heterojunction SiGe Double Gate Vertical t-shaped Tunnel Field Effect transistor and contemplate the inherit property of TFET that is dual modulation effect. This influence explains the control on the surface potential of the bot...