Comparison of irradiated stFZ silicon sensors using LHC speed front-end electronics

• Published in: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 583; no. 1; pp. 14 - 17
• Main Authors: Eckert, S., Ehrich, T., Jakobs, K., Kühn, S., Parzefall, U.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 11.12.2007
• Subjects: [formula omitted]- [formula omitted] set-up; Charge collection efficiency; IR laser; Irradiation; Radiation damage; Silicon micro-strip detectors; 71.55.Cn; Charge collection efficiency; 61.82Fk; 90 Sr - β set-up; Silicon micro-strip detectors; Irradiation; 29.40Wk; IR laser; 29.40.Gx; Radiation damage
• ISSN: 0168-9002; 1872-9576
• DOI: 10.1016/j.nima.2007.08.192

Results from irradiated detector modules assembled with sensors made out of standard p-in-n FZ silicon will be presented. The modules were read out using LHC speed front-end electronics and characterised with different techniques. Two complementary methods to generate the charge inside the sensor were used: An IR laser set-up with a wavelength of λ = 982 nm and a β set-up utilising a 90 Sr source allowing for both relative and absolute CCE measurements. As the aim of our measurement programme is to develop silicon detectors able to operate at the sLHC, these modules were irradiated with three different fluences with the highest corresponding roughly to the fluence expectations for an LHC luminosity upgrade at a radial distance of r ≈ 35 cm [M. Huhtinen, First CMS Upgrade Workshop, CERN, February 26–27, 2004. 〈 http://agenda.cern.ch/fullAgenda.php?ida=a036368 〉 ]. The sensors were characterised before and after irradiation with 26 MeV protons. After irradiation the modules were stored at temperatures below - 40 ∘ C and operated at temperatures around - 5 ∘ C to limit the leakage current and annealing effects. The full depletion voltage V fd and the charge collection efficiency have been measured.