Biodegradable natural chitosan coating films-based flexible resistive switching memory for transient electronics

•Ag-doped chitosan as function layer was employed to develop the bio-memristor.•A current–voltage (I-V) hysteresis with a typical capacitive effect is impressively observed.•Nonvolatile data storage is feasible using the non-zero-crossing I-V hysteresis.•The evolution of the resistive behavior of th...

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Published inMaterials science & engineering. B, Solid-state materials for advanced technology Vol. 295; p. 116578
Main Authors He, Nian, Sun, Yanmei, Yuan, Qi, Wang, Yufei, Zuo, Shiyi
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.09.2023
Subjects
Chitosan
Coating films
Memristor
Transient electronics
Transient electronics
Memristor
Chitosan
Coating films
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Summary:•Ag-doped chitosan as function layer was employed to develop the bio-memristor.•A current–voltage (I-V) hysteresis with a typical capacitive effect is impressively observed.•Nonvolatile data storage is feasible using the non-zero-crossing I-V hysteresis.•The evolution of the resistive behavior of the memristor is observed. Three flexible transparent transient memristors based on degradable natural chitosan coating films are reported. The Mg/Ag-doped chitosan/ITO sandwich structures were prepared by spin coating and drop coating, respectively. The plane structure device was also prepared. Three kinds of device exhibit different memory behaviors, namely, bipolar resistive switching behavior and butterfly resistive switching behavior accompanied by capacitance and negative resistance effect. The elucidated behavior of the bipolar resistive switching can be attributed to filament conduction. The behavior of the butterfly resistive switching is attributed to interface effects. In addition, the three devices have a large on/off ratio and long data retention time, showing promising non-volatile memory characteristics in flexible memory applications. The switching mechanism was evaluated by Schottky emission, hopping and direct tunneling. The transient memristor device prepared in this paper has excellent transient characteristics and controllable performance. This work reveals the potential of biodegradable flexible electronic devices.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2023.116578